parameter symbol max unit repetitive peak off-state voltages v drm v rrm 600 v average on-state current i t(av) 2.5 a rms on-state current i t(rms) 4.0 a non-repetitive peak on-state current i tsm 38 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c c106m general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 600 v average on-state current i t(av) half sine wave; t mb < 103 o c 2.5 a rms on-state current i t(rms) all conduction angles 4.0 a on-state voltage v t i t =5.0a 1.23 1.8 v holding current i h v d =12 v; i gt = 0.1 a 0.1 6.0 ma latching current i l v d =12 v; i gt = 0.1 a 0.17 10 ma gate trigger current i gt v d =12 v; i t = 0.1 a 15 200 ua gate trigger voltage v gt v d =12 v; i t = 0.1 a 0.4 1.5 v thyristors logic level passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. this device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. product specification to-126 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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